Which of the following statements on DRAM are correct ?

(i) Page mode read operation is faster than RAS read. 

(ii) RAS input remains active during column address strobe. 

(iii) The row and column addresses are strobed into the internal buffers using RAS and CAS inputs respectively. 

DRAM (Dynamic Random-Access Memory)

Definition: DRAM is a type of semiconductor memory that is used in computing devices to store data. It is dynamic because it needs to be refreshed periodically to maintain the stored data. DRAM is widely used in computer systems due to its cost-effectiveness and high density compared to other types of memory such as SRAM (Static RAM).

Correct Option Analysis:

The correct option is:

Option 1: (i) & (iii)

This option is correct for the following reasons:

Statement (i): Page mode read operation is faster than RAS read.

Page mode is a method used to access DRAM more quickly by keeping the row address strobe (RAS) line active while multiple column addresses are accessed. This allows for faster access to data located in the same row, as only the column addresses need to be changed. In contrast, a RAS read operation requires both the row and column addresses to be accessed for each read, which is slower. Therefore, page mode read operations are indeed faster than RAS read operations.

Statement (iii): The row and column addresses are strobed into the internal buffers using RAS and CAS inputs respectively.

This statement accurately describes the operation of DRAM. The row address is first placed on the address lines and then strobed into the DRAM using the RAS signal. Following this, the column address is placed on the address lines and strobed into the DRAM using the CAS (Column Address Strobe) signal. This mechanism is fundamental to the operation of DRAM, ensuring that the correct memory cell is accessed